2N7002V/va ? n-channel enhancemen t mode field effect transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com 2N7002V/va rev. a 1 october 2007 2N7002V/va n-channel enhancement mode field effect transistor features ? dual n-channel mosfet ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra-small surface mount package ? lead free by design/rohs compliant absolute maximum ratings * t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may by impaired. thermal characteristics * device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch. minimun land pad size, symbol parameter value units v dss drain-source voltage 60 v v dgr drain-gate voltage r gs 1.0m ? 60 v v gss gate-source voltage continuous pulsed 20 40 v i d drain current continuous pulsed 280 1.5 ma a t j , t stg junction and storage temperature range -55 to +150 c symbol parameter value units p d total device dissipation derating above t a = 25c 250 2.0 mw mw/ c r ja thermal resistance, junction to ambient * 500 c/w sot - 563f (pin1) marking : ab marking : ac
2N7002V/va ? n-channel enhancemen t mode field effect transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com 2N7002V/va rev. a 2 electrical characteristics t c = 25c unless otherwise noted off characteristics (note1) on characteristics (note1) dynamic characteristics switching characteristics note1 : short duration test pulse used to minimize self-heating effect . symbol parameter test condition min typ max units bv dss drain-source breakdown voltage v gs = 0v, i d =10ua 60 78 - v i dss zero gate voltage drain current v ds = 60v, v gs = 0v v ds = 60v, v gs = 0v, @t c = 125 c - 0.001 7 1.0 500 ua i gss gate-body leakage v gs = 20v, v ds = 0v - 0.2 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 1.0 1.76 2.5 v r ds(on) satic drain-source on-resistance v gs = 5v, i d = 0.05a, v gs = 10v, i d = 0.5a, t j = 125c - - 1.6 2.53 7.5 13.5 ? i d(on) on-state drain current v gs = 10v, v ds = 7.5v 0.5 1.43 - a g fs forward transconductance v ds = 10v, i d = 0.2a 80 356.5 - ms c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz - 37.8 50 pf c oss output capacitance - 12.4 25 pf c rss reverse transfer capacitance - 6.5 7.0 pf t d(on) turn-on delay time v dd = 30v, i d = 0.2a, v gen = 10v r l = 150 ? , r gen = 25 ? - 5.85 20 ns t d(off) turn-off delay time - 12.5 20
2N7002V/va ? n-channel enhancemen t mode field effect transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com 2N7002V/va rev. a 3 typical performance characteristics figure 1. on-region characteristics figure 2. on-resistance variation with gate voltage and drain current figure 3. on-resistance variation with temperature figure 4. on-resistance variation with gate-source voltage figure 5. transfer characteristics figure 6. gate threshold variation with temperature 012345678910 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2v 3v 4v 5v v gs = 10v i d . drain-source current(a) v ds . drain-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.0 1.5 2.0 2.5 3.0 (?) 9v 8v 5v 6v 10v 7v 4v 4.5v v gs = 3v r ds (on), drani-source on-resistance i d . drain-source current(a) -50 0 50 100 150 0.5 1.0 1.5 2.0 2.5 3.0 (?) v gs = 10v i d = 500 ma r ds (on) drani-source on-resistance t j . junction temperature( o c) 246810 1.0 1.5 2.0 2.5 3.0 i d = 500 ma (?) i d = 50 ma r ds (on), drani-source on-resistance v gs . gate-source voltage (v) 23456 0.0 0.2 0.4 0.6 0.8 1.0 v ds = 10v 75 o c 125 o c 150 o c 25 o c t j = -25 o c i d . drain-source current(a) v gs . gate-source voltage (v) -50 0 50 100 150 1.0 1.5 2.0 2.5 i d = 0.25 ma i d = 1 ma v gs = v ds vth, gate-source threshold voltage (v) t j . junction temperature( o c)
2N7002V/va ? n-channel enhancemen t mode field effect transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com 2N7002V/va rev. a 4 typical performance characteristics figure 7. reverse drain current variation with diode forward voltage and temperature figure 8. power derating 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 -55 o c v gs = 0 v 150 o c 25 o c v sd , body diode forward voltage [v] i s reverse drain current, [ma] 0 25 50 75 100 125 150 175 0 50 100 150 200 250 300 p c [mw], power dissipation t a [ o c], ambient temperature
2N7002V/va ? n-channel enhancemen t mode field effect transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com 2N7002V/va rev. a 5 package dimensions land pattern recommendation detail a scale 2 : 1 0.10 0.00 top view bottom view 1.70 1.50 0.50 1.00 0.30 0.15 0.60 0.56 (0.20) 13 64 see detail a 1.80 0.30 1.25 0.50 0.50 0.55 1.20 bsc 0.20 bsc 0.35 bsc 0.18 0.10 0.1 c b a a b c 1.60 dimensions in millimeters sot563f
2N7002V/va n-channel enhancemen t mode field effect transistor 2N7002V/va trademarks the following are registered and unregistered trademarks and service marks fairchild semiconductor ow ns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further no tice to any products herein to improve reliability, funct ion, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others . these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specific ally the warranty therein, which covers these products. life support policy fairchild?s products are not author ized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications fo r product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminar y data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specificat ions. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specificatio ns on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i30 ? 2007 fairchild semiconductor corporation www.fairchildsemi.com 2N7002V/va rev. a 6
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